文献
J-GLOBAL ID:201802213948357806
整理番号:18A1300152
2%を超える窒素組成を持つGaAs/GaNAsコア-マルチシェルナノワイヤ【JST・京大機械翻訳】
GaAs/GaNAs core-multishell nanowires with nitrogen composition exceeding 2%
著者 (9件):
Yukimune M.
(Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan)
,
Fujiwara R.
(Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan)
,
Ikeda H.
(Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan)
,
Yano K.
(Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan)
,
Takada K.
(Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan)
,
Jansson M.
(Department of Physics, Chemistry and Biology, Linkoping University, 58183 Linkoping, Sweden)
,
Chen W. M.
(Department of Physics, Chemistry and Biology, Linkoping University, 58183 Linkoping, Sweden)
,
Buyanova I. A.
(Department of Physics, Chemistry and Biology, Linkoping University, 58183 Linkoping, Sweden)
,
Ishikawa F.
(Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
113
号:
1
ページ:
011901-011901-5
発行年:
2018年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)