文献
J-GLOBAL ID:201802214151354398
整理番号:18A2163245
GaN/AlN 2D正孔ガスに基づく高オン電流を持つゲートリセスEモードpチャネルHFET【JST・京大機械翻訳】
Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas
著者 (9件):
Bader Samuel James
(Department of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA)
,
Chaudhuri Reet
(Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA)
,
Nomoto Kazuki
(Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA)
,
Hickman Austin
(Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA)
,
Chen Zhen
(Department of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA)
,
Then Han Wui
(Intel Corporation, Hillsboro, OR, USA)
,
Muller David A.
(Department of Applied and Engineering Physics, Kavli Institute, Cornell University, Ithaca, NY, USA)
,
Xing Huili Grace
(Department of Electrical and Computer Engineering, Materials Science and Engineering, Kavli Institute, Cornell University, Ithaca, NY, USA)
,
Jena Debdeep
(Department of Electrical and Computer Engineering, Materials Science and Engineering, Kavli Institute, Cornell University, Ithaca, NY, USA)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
39
号:
12
ページ:
1848-1851
発行年:
2018年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)