文献
J-GLOBAL ID:201802214244966622
整理番号:18A1489848
セリウムドープGd_3Al_2Ga_3O_12結晶中の酸素空孔に隣接するGd2+イオンにより形成された浅い電子トラップ【JST・京大機械翻訳】
Shallow electron traps formed by Gd2+ ions adjacent to oxygen vacancies in cerium-doped Gd3Al2Ga3O12 crystals
著者 (9件):
Kitaura Mamoru
(Faculty of Science, Yamagata University, Yamagata 990-8560, Japan)
,
Watanabe Shinta
(Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan)
,
Kamada Kei
(New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan)
,
Jin Kim Kyoung
(Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan)
,
Yoshino Masao
(Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan)
,
Kurosawa Shunsuke
(Faculty of Science, Yamagata University, Yamagata 990-8560, Japan)
,
Yagihashi Toru
(Faculty of Science, Yamagata University, Yamagata 990-8560, Japan)
,
Ohnishi Akimasa
(Faculty of Science, Yamagata University, Yamagata 990-8560, Japan)
,
Hara Kazuhiko
(Research Institutes of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
113
号:
4
ページ:
041906-041906-4
発行年:
2018年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)