文献
J-GLOBAL ID:201802214308689640
整理番号:18A1597004
誘導負荷ターンオフ中の深い酸化物トレンチSOI横方向IGBTのためのV_CEプラトーの最適化【JST・京大機械翻訳】
Optimization of ${V}_{¥text{CE}}$ Plateau for Deep-Oxide Trench SOI Lateral IGBT During Inductive Load Turn-OFF
著者 (9件):
Zhang Long
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Zhu Jing
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Cao Shilin
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Ma Jie
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Li Shaohong
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Liu Siyang
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Sun Weifeng
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Zhao Jianfeng
(School of Electrical Engineering, Southeast University, Nanjing, China)
,
Shi Longxing
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
65
号:
9
ページ:
3862-3868
発行年:
2018年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)