文献
J-GLOBAL ID:201802214444842065
整理番号:18A0476004
最適化されたp-GaNゲートAlGaN/GaNH EMTの非意図的ドープしたGaNバッファ層におけるトラップ準位の影響【Powered by NICT】
Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p-GaN Gate AlGaN/GaN HEMTs
著者 (9件):
Ge Mei
(The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China)
,
Cai Qing
(The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China)
,
Zhang Baohua
(Department of Physics, Changji College, Changji, 831100, China)
,
Chen Dunjun
(The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China)
,
Hu Liqun
(The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China)
,
Xue Junjun
(School of Electronic Science and Engineering, Nanjign University of Posts and Telecommunications, Nanjing, 210023, China)
,
Lu Hai
(The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China)
,
Zhang Rong
(The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China)
,
Zheng Youdou
(The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
215
号:
2
ページ:
ROMBUNNO.201700368
発行年:
2018年
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)