文献
J-GLOBAL ID:201802214540004716
整理番号:18A0446849
ホールバリアフリーEモードLPCVD SiN_x/GaN MISFETの逆バイアス安定性と信頼性【Powered by NICT】
Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiNx/GaN MIS-FETs
著者 (8件):
Hua Mengyuan
(The Hong Kong University of Science and Technology, Kowloon, Hong Kong, China)
,
Wei Jin
(The Hong Kong University of Science and Technology, Kowloon, Hong Kong, China)
,
Bao Qilong
(The Hong Kong University of Science and Technology, Kowloon, Hong Kong, China)
,
He Jiabei
(The Hong Kong University of Science and Technology, Kowloon, Hong Kong, China)
,
Zhang Zhaofu
(The Hong Kong University of Science and Technology, Kowloon, Hong Kong, China)
,
Zheng Zheyang
(The Hong Kong University of Science and Technology, Kowloon, Hong Kong, China)
,
Lei Jiacheng
(The Hong Kong University of Science and Technology, Kowloon, Hong Kong, China)
,
Chen Kevin J.
(The Hong Kong University of Science and Technology, Kowloon, Hong Kong, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
IEDM
ページ:
33.2.1-33.2.4
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)