文献
J-GLOBAL ID:201802214905380253
整理番号:18A1898744
28nmノードとそれ以上に埋め込まれた応用に向けた抵抗スイッチングメモリ【JST・京大機械翻訳】
Resistive Switching Memory towards Embedded Application in 28 nm Node and Beyond
著者 (7件):
Liu Jing
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Lv Hangbing
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Xu Xiaoxin
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Dong Danian
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Yuan Peng
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Yu Zhaoan
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Liu Ming
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2018
号:
EDSSC
ページ:
1-2
発行年:
2018年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)