文献
J-GLOBAL ID:201802215365745480
整理番号:18A1937626
堆積後窒素プラズマ処理により実現した低抵抗相純粋n型Cu_2O膜【JST・京大機械翻訳】
Low resistivity phase-pure n-type Cu2O films realized via post-deposition nitrogen plasma treatment
著者 (6件):
Xu Meng
(Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China)
,
Liu Xiaohui
(Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China)
,
Xu Weidong
(Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China)
,
Xu Huayong
(Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China)
,
Hao Xiaotao
(School of Physics, Shandong University, Jinan 250100, China)
,
Feng Xianjin
(Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
769
ページ:
484-489
発行年:
2018年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)