文献
J-GLOBAL ID:201802215437747556
整理番号:18A1567762
表面吸着と脱着により影響された超薄InGaN膜におけるエネルギーバンド傾斜【JST・京大機械翻訳】
Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption
著者 (18件):
Liu Wei
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Liu Wei
(School of Software and Microelectronics, Northwestern Polytechnical University, Xi’an 710072, China)
,
Yang Jing
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Zhao Degang
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Zhao Degang
(School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China)
,
Jiang Desheng
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Zhu Jianjun
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Zhu Jianjun
(School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China)
,
Chen Ping
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Liu Zongshun
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Liang Feng
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Liu Shuangtao
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Xing Yao
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Zhang Liqun
(Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China)
,
Wang Wenjie
(Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China)
,
Li Mo
(Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China)
,
Zhang Yuantao
(State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China)
,
Du Guotong
(State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
456
ページ:
487-492
発行年:
2018年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)