文献
J-GLOBAL ID:201802216432212784
整理番号:18A1028804
シリコンの屋外および濃度下での改良GaAsP/SiGeタンデム【JST・京大機械翻訳】
Improved GaAsP/SiGe tandem on silicon outdoors and under concentration
著者 (9件):
Conrad Brianna
(School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney, NSW 2052, Australia)
,
Soeriyadi Anastasia
(School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney, NSW 2052, Australia)
,
Li Dun
(School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney, NSW 2052, Australia)
,
Wang Li
(School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney, NSW 2052, Australia)
,
Zhao Xin
(School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney, NSW 2052, Australia)
,
Lochtefeld Anthony
(AmberWave Inc., Salem, NH 03079, USA)
,
Gerger Andrew
(SolAero Technologies Corp, Albuquerque, NM 87123, USA)
,
Perez-Wurfl Ivan
(School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney, NSW 2052, Australia)
,
Barnett Allen
(School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney, NSW 2052, Australia)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
PVSC
ページ:
1-5
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)