文献
J-GLOBAL ID:201802216457440106
整理番号:18A1620731
溶液処理Rbドープ酸化インジウム亜鉛薄膜トランジスタ【JST・京大機械翻訳】
Solution-Processed Rb-Doped Indium Zinc Oxide Thin-Film Transistors
著者 (10件):
Kim Sang-Woo
(Department of Materials Science and Engineering, Inha University, Incheon, South Korea)
,
Nguyen Manh-Cuong
(Department of Materials Science and Engineering, Inha University, Incheon, South Korea)
,
Nguyen An Hoang-Thuy
(Department of Materials Science and Engineering, Inha University, Incheon, South Korea)
,
Choi Su-Jin
(Department of Materials Science and Engineering, Inha University, Incheon, South Korea)
,
Ji Hyung-Min
(Department of Materials Science and Engineering, Inha University, Incheon, South Korea)
,
Cheon Jong-Gyu
(Department of Materials Science and Engineering, Inha University, Incheon, South Korea)
,
Yu Kyoung-Moon
(Department of Materials Science and Engineering, Inha University, Incheon, South Korea)
,
Kim Jin-Hyun
(Department of Materials Science and Engineering, Inha University, Incheon, South Korea)
,
Cho Seong-Yong
(Department of Materials Science and Engineering, Inha University, Incheon, South Korea)
,
Choi Rino
(Department of Materials Science and Engineering, Inha University, Incheon, South Korea)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
39
号:
9
ページ:
1330-1333
発行年:
2018年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)