文献
J-GLOBAL ID:201802217990927438
整理番号:18A0422394
GaAs(211)B基板上の閃亜鉛鉱型MgSの分子ビームエピタキシャル成長【Powered by NICT】
Molecular beam epitaxial growth of zinc blende MgS on GaAs (2 1 1)B substrates
著者 (5件):
Zhu J.
(School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom)
,
Eldose N.M.
(School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom)
,
Mavridi N.
(School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom)
,
Prior K.A.
(School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom)
,
Moug R.T.
(School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
485
ページ:
86-89
発行年:
2018年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)