文献
J-GLOBAL ID:201802218936201018
整理番号:18A2004706
低電力で高信頼性のFe_3O_4/Ta_2O_5二層RRAMにおける導電性フィラメント進展の解明【JST・京大機械翻訳】
Revealing conducting filament evolution in low power and high reliability Fe3O4/Ta2O5 bilayer RRAM
著者 (10件):
Chang Chia-Fu
(Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan)
,
Chen Jui-Yuan
(Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan)
,
Huang Guan-Min
(Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan)
,
Lin Ting-Yi
(Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan)
,
Tai Kuo-Lun
(Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan)
,
Huang Chih-Yang
(Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan)
,
Yeh Ping-Hung
(Department of Physics, Tamkang University, 151 Ying Chuan Road, Taipei 251, Taiwan)
,
Wu Wen-Wei
(Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan)
,
Wu Wen-Wei
(Center for the Intelligent Semiconductor Nano-system Technology Research, National Chiao Tung University, Hsinchu 300, Taiwan)
,
Wu Wen-Wei
(Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 300, Taiwan)
資料名:
Nano Energy
(Nano Energy)
巻:
53
ページ:
871-879
発行年:
2018年
JST資料番号:
W3116A
ISSN:
2211-2855
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)