文献
J-GLOBAL ID:201802219669445109
整理番号:18A1242728
励起子形成界面のエンジニアリングによる効率的なCuIn_2/ZnSベース量子ドット発光ダイオード【JST・京大機械翻訳】
Efficient CuInS2/ZnS based quantum dot light emitting diodes by engineering the exciton formation interface
著者 (8件):
Huang Xia
(School of Mathematics and Physics, North China Electric Power University, Beijing, China)
,
Huang Xia
(College of Physics, Jilin University, Changchun 130012, China)
,
Yu Rongmei
(College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China)
,
Yang Xingqiang
(College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China)
,
Xu Xiumei
(College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China)
,
Zhang Han
(College of Physics, Jilin University, Changchun 130012, China)
,
Zhang Dandan
(Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren’ai Road, Suzhou 215123, Jiangsu, China)
,
Zhang Dandan
(David Geffen School of Medicine, University of California, Los Angeles 90095, United States)
資料名:
Journal of Luminescence
(Journal of Luminescence)
巻:
202
ページ:
339-344
発行年:
2018年
JST資料番号:
D0731A
ISSN:
0022-2313
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)