文献
J-GLOBAL ID:201802221569651198
整理番号:18A1208230
有機金属気相エピタクシーにより成長させた歪補償GaAs_0.965Bi_0.035/GaAs_0.75P_0.25多重量子井戸を用いた単一接合太陽電池【JST・京大機械翻訳】
Single junction solar cell employing strain compensated GaAs0.965Bi0.035/GaAs0.75P0.25 multiple quantum wells grown by metal organic vapor phase epitaxy
著者 (6件):
Kim Honghyuk
(Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA)
,
Kim Kangho
(Department of Electronic Engineering, Ajou University, Suwon 443-749, South Korea)
,
Guan Yingxin
(Department of Material Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA)
,
Lee Jaejin
(Department of Electronic Engineering, Ajou University, Suwon 443-749, South Korea)
,
Kuech Thomas F.
(Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA)
,
Mawst Luke J.
(Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
112
号:
25
ページ:
251105-251105-5
発行年:
2018年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)