文献
J-GLOBAL ID:201802222856608093
整理番号:18A2112458
SnドープIn_2O_3薄膜の微細構造,電気的および光学的性質に及ぼす酸素分圧の影響【JST・京大機械翻訳】
Effects of oxygen partial pressure on the microstructure, electrical and optical properties of the Sn-doped In2O3 thin films
著者 (4件):
Liu Xiaochan
(Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Material Science and Engineering, Tianjin University...)
,
An Yukai
(Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Material Science and Engineering, Tianjin University...)
,
Lin Zhen
(Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Material Science and Engineering, Tianjin University...)
,
Liu Jiwen
(Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Material Science and Engineering, Tianjin University...)
資料名:
Modern Physics Letters B. Condensed Matter Physics, Statistical Physics, Applied Physics
(Modern Physics Letters B. Condensed Matter Physics, Statistical Physics, Applied Physics)
巻:
32
号:
24
ページ:
1850284
発行年:
2018年
JST資料番号:
T0431A
ISSN:
0217-9849
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
シンガポール (SGP)
言語:
英語 (EN)