文献
J-GLOBAL ID:201802223261011576
整理番号:18A1353576
高温アニーリング中の高窒素ドープSiCにおける二重Shockley積層欠陥膨張に対するSiコア部分転位の滑り速度【JST・京大機械翻訳】
Glide velocities of Si-core partial dislocations for double-Shockley stacking fault expansion in heavily nitrogen-doped SiC during high-temperature annealing
著者 (8件):
Tokuda Y.
(DENSO CORPORATION, 500-1 Minamiyama, Komenoki, Nisshin, Aichi 470-0111, Japan)
,
Kamata I.
(Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan)
,
Miyazawa T.
(Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan)
,
Hoshino N.
(Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan)
,
Kato T.
(National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan)
,
Okumura H.
(National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan)
,
Kimoto T.
(Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan)
,
Tsuchida H.
(Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
124
号:
2
ページ:
025705-025705-11
発行年:
2018年
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)