文献
J-GLOBAL ID:201802223551086634
整理番号:18A0190820
AlN及びGaN核形成層を用いて成長させたとサファイア基板上に作製したAlGaN/GaNH EMTの比較【Powered by NICT】
Comparison of AlGaN/GaN HEMTs grown and fabricated on sapphire substrate with AIN and GaN nucleation layers
著者 (10件):
Gao N.
(National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, NO. 113, Hezuo Road, Shijiazhuang, China)
,
Fang Y. L.
(National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, NO. 113, Hezuo Road, Shijiazhuang, China)
,
Yin J. Y.
(National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, NO. 113, Hezuo Road, Shijiazhuang, China)
,
Wang B.
(National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, NO. 113, Hezuo Road, Shijiazhuang, China)
,
Guo Y. M.
(National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, NO. 113, Hezuo Road, Shijiazhuang, China)
,
He Z. Z.
(National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, NO. 113, Hezuo Road, Shijiazhuang, China)
,
Gu G. D.
(National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, NO. 113, Hezuo Road, Shijiazhuang, China)
,
Guo H. Y.
(National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, NO. 113, Hezuo Road, Shijiazhuang, China)
,
Feng Z. H.
(National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, NO. 113, Hezuo Road, Shijiazhuang, China)
,
Cai S. J.
(National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, NO. 113, Hezuo Road, Shijiazhuang, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
SSLChina: IFWS
ページ:
195-199
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)