文献
J-GLOBAL ID:201802223558521301
整理番号:18A1330525
コスト効果の高い最小製造プロセスを用いた円形シリコン・オン・インシュレータ振動板上に作製したpチャネル金属酸化膜半導体電界効果トランジスタのピエゾ抵抗効果の検討
Investigation of piezoresistive effect in p-channel metal-oxide-semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process
著者 (13件):
LIU Yongxun
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
TANAKA Hiroyuki
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
TANAKA Hiroyuki
(Minimal Fab General Inc. Assoc., Ibaraki, JPN)
,
UMEYAMA Norio
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
UMEYAMA Norio
(Minimal Fab General Inc. Assoc., Ibaraki, JPN)
,
KOGA Kazuhiro
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
KOGA Kazuhiro
(Minimal Fab General Inc. Assoc., Ibaraki, JPN)
,
KHUMPUANG Sommawan
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
KHUMPUANG Sommawan
(Minimal Fab General Inc. Assoc., Ibaraki, JPN)
,
NAGAO Masayoshi
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
MATSUKAWA Takashi
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
HARA Shiro
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
HARA Shiro
(Minimal Fab General Inc. Assoc., Ibaraki, JPN)
資料名:
Japanese Journal of Applied Physics
(Japanese Journal of Applied Physics)
巻:
57
号:
6S1
ページ:
06HD03.1-06HD03.6
発行年:
2018年06月
JST資料番号:
G0520B
ISSN:
0021-4922
CODEN:
JJAPB6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)