文献
J-GLOBAL ID:201802223806833021
整理番号:18A1900252
低スイッチング損失と状態電圧による新しい正孔経路とキャリア蓄積IGBT【JST・京大機械翻訳】
A Novel Hole-Path and Carrier-Stored IGBT with Low Switching Loss and On State Voltage
著者 (7件):
Wang Shaogang
(School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin, 541004, China)
,
Luo Houcai
(School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin, 541004, China)
,
Chen Xianping
(School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin, 541004, China)
,
Tan Chunjian
(School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin, 541004, China)
,
Li Shaolin
(School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin, 541004, China)
,
Wang Liming
(School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin, 541004, China)
,
Ye Huaiyu
(Chongqing University and College of Optoelectronic Engineering, Chongqing University, Chongqing, 400044, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2018
号:
ICEPT
ページ:
1223-1226
発行年:
2018年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)