文献
J-GLOBAL ID:201802224338958809
整理番号:18A1994901
窒素イオンビーム注入による埋め込みシリコンオン絶縁層を有するシリコン太陽電池【JST・京大機械翻訳】
Silicon Solar Cells with Embedded Silicon-on-Insulation Layer via Nitrogen Ion Beam Implantation
著者 (4件):
Sahu Rajkumar
(Department of Mechanical Engineering and Research Center of Industrial Technology, Chonbuk National University, Jeonju 54896, South Korea)
,
Palei Srikanta
(Department of Mechanical Engineering and Research Center of Industrial Technology, Chonbuk National University, Jeonju 54896, South Korea)
,
Mun Jonghun
(Department of Mechanical Engineering and Research Center of Industrial Technology, Chonbuk National University, Jeonju 54896, South Korea)
,
Kim Keunjoo
(Department of Mechanical Engineering and Research Center of Industrial Technology, Chonbuk National University, Jeonju 54896, South Korea)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
215
号:
20
ページ:
e1701018
発行年:
2018年
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)