文献
J-GLOBAL ID:201802224832778434
整理番号:18A1806644
SiO_2ゲート絶縁体とZrベースのOhm接触を有するドープ障壁Al_0.65Ga_0.35N/Al_0.40Ga_0.60N MOSHFET【JST・京大機械翻訳】
Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2 Gate-Insulator and Zr-Based Ohmic Contacts
著者 (8件):
Hu Xuhong
(Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA)
,
Hwang Seongmo
(Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA)
,
Hussain Kamal
(Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA)
,
Floyd Richard
(Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA)
,
Mollah Shahab
(Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA)
,
Asif Fatima
(Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA)
,
Simin Grigory
(Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA)
,
Khan Asif
(Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
39
号:
10
ページ:
1568-1571
発行年:
2018年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)