文献
J-GLOBAL ID:201802226012414680
整理番号:18A0589724
10nmクラスDRAMプロセスにおけるNBTI耐性回路解,SWD PMOS GIDL低減技術,適応歯車ダウン方式と準安定自由DQS露光装置を用いた16Gb LPDDR4X SDRAM【Powered by NICT】
A 16Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10nm class DRAM process
著者 (47件):
Chun Ki Chul
(Samsung Electronics, Hwaseong, Korea)
,
Chu Yong-Gyu
(Samsung Electronics, Hwaseong, Korea)
,
Heo Jin-Seok
(Samsung Electronics, Hwaseong, Korea)
,
Kim Tae-Sung
(Samsung Electronics, Hwaseong, Korea)
,
Kim Soohwan
(Samsung Electronics, Hwaseong, Korea)
,
Yang Hui-Kap
(Samsung Electronics, Hwaseong, Korea)
,
Kim Mi-Jo
(Samsung Electronics, Hwaseong, Korea)
,
Lee Chang-Kyo
(Samsung Electronics, Hwaseong, Korea)
,
Kim Juhwan
(Samsung Electronics, Hwaseong, Korea)
,
Yoon Hyunchul
(Samsung Electronics, Hwaseong, Korea)
,
Shin Chang-Ho
(Samsung Electronics, Hwaseong, Korea)
,
Cha Sanguhn
(Samsung Electronics, Hwaseong, Korea)
,
Kim Hyung-Jin
(Samsung Electronics, Hwaseong, Korea)
,
Kim Young-Sik
(Samsung Electronics, Hwaseong, Korea)
,
Kim Kyungryun
(Samsung Electronics, Hwaseong, Korea)
,
Kim Young-Ju
(Samsung Electronics, Hwaseong, Korea)
,
Choi Wonjun
(Samsung Electronics, Hwaseong, Korea)
,
Yim Dae-Sik
(Samsung Electronics, Hwaseong, Korea)
,
Moon Inkyu
(Samsung Electronics, Hwaseong, Korea)
,
Kim Young-Ju
(Samsung Electronics, Hwaseong, Korea)
,
Lee Junha
(Samsung Electronics, Hwaseong, Korea)
,
Choi Young
(Samsung Electronics, Hwaseong, Korea)
,
Kwon Yongmin
(Samsung Electronics, Hwaseong, Korea)
,
Choi Sung-Won
(Samsung Electronics, Hwaseong, Korea)
,
Kim Jung-Wook
(Samsung Electronics, Hwaseong, Korea)
,
Park Yoon-Suk
(Samsung Electronics, Hwaseong, Korea)
,
Kang Woongdae
(Samsung Electronics, Hwaseong, Korea)
,
Chung Jinil
(Samsung Electronics, Hwaseong, Korea)
,
Kim Seunghyun
(Samsung Electronics, Hwaseong, Korea)
,
Ryu Yesin
(Samsung Electronics, Hwaseong, Korea)
,
Cho Seong-Jin
(Samsung Electronics, Hwaseong, Korea)
,
Shin Hoon
(Samsung Electronics, Hwaseong, Korea)
,
Jung Hangyun
(Samsung Electronics, Hwaseong, Korea)
,
Kwon Sanghyuk
(Samsung Electronics, Hwaseong, Korea)
,
Kang Kyuchang
(Samsung Electronics, Hwaseong, Korea)
,
Lee Jongmyung
(Samsung Electronics, Hwaseong, Korea)
,
Song Yujung
(Samsung Electronics, Hwaseong, Korea)
,
Kim Young-Jae
(Samsung Electronics, Hwaseong, Korea)
,
Kim Eun-Ah
(Samsung Electronics, Hwaseong, Korea)
,
Ha Kyung-Soo
(Samsung Electronics, Hwaseong, Korea)
,
Kim Kyoung-Ho
(Samsung Electronics, Hwaseong, Korea)
,
Hyun Seok-Hun
(Samsung Electronics, Hwaseong, Korea)
,
Ko Seungbum
(Samsung Electronics, Hwaseong, Korea)
,
Choi Jung-Hwan
(Samsung Electronics, Hwaseong, Korea)
,
Sohn Young-Soo
(Samsung Electronics, Hwaseong, Korea)
,
Park Kwang-Il
(Samsung Electronics, Hwaseong, Korea)
,
Jang Seong-Jin
(Samsung Electronics, Hwaseong, Korea)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2018
号:
ISSCC
ページ:
206-208
発行年:
2018年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)