文献
J-GLOBAL ID:201802226212613176
整理番号:18A1490513
深準位過渡分光法と少数キャリア寿命により評価したn型結晶シリコンウエハにおけるドライエッチ損傷【JST・京大機械翻訳】
Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime
著者 (7件):
Simoen Eddy
(Imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Sivaramakrishnan Radhakrishnan Hariharsudan
(Imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Gius Uddin Md.
(Imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Gordon Ivan
(Imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Poortmans Jef
(Imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Wang Chong
(School of Optoelectronic Information, University of Electronic Science and Technology of China, 610054 Chengdu, Sichuan, People’s Republic China)
,
Li Wei
(School of Optoelectronic Information, University of Electronic Science and Technology of China, 610054 Chengdu, Sichuan, People’s Republic China)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
36
号:
4
ページ:
041201-041201-8
発行年:
2018年
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)