文献
J-GLOBAL ID:201802227036472616
整理番号:18A1191896
数層GeAs電界効果トランジスタと赤外光検出器【JST・京大機械翻訳】
Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors
著者 (14件):
Guo Jian
(Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA)
,
Liu Yuan
(Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA)
,
Ma Yue
(Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA)
,
Zhu Enbo
(Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA)
,
Lee Shannon
(Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA)
,
Lee Shannon
(Department of Chemistry, Iowa State University, and Ames Laboratory, Ames, IA, 50011, USA)
,
Lu Zixuan
(Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA)
,
Zhao Zipeng
(Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA)
,
Xu Changhao
(Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA)
,
Lee Sung-Joon
(Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA)
,
Wu Hao
(Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA)
,
Kovnir Kirill
(Department of Chemistry, Iowa State University, and Ames Laboratory, Ames, IA, 50011, USA)
,
Huang Yu
(Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA)
,
Duan Xiangfeng
(Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, 90095, USA)
資料名:
Advanced Materials
(Advanced Materials)
巻:
30
号:
21
ページ:
e1705934
発行年:
2018年
JST資料番号:
W0001A
ISSN:
0935-9648
CODEN:
ADVMEW
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)