文献
J-GLOBAL ID:201802228597910714
整理番号:18A1488450
GaNベースの高電子移動度トランジスタのための洗練された分離技術【JST・京大機械翻訳】
Refined isolation techniques for GaN-based high electron mobility transistors
著者 (5件):
Sharma Niketa
(Smart Sensor Area, CSIR - Central Electronics Engineering Research Institute, Pilani 333031, India)
,
Sharma Niketa
(Department of Electronics and Communication Engineering, Malaviya National Institute of Technology, Jaipur 302017, India)
,
Dhakad Sandeep Kumar
(Smart Sensor Area, CSIR - Central Electronics Engineering Research Institute, Pilani 333031, India)
,
Periasamy C.
(Department of Electronics and Communication Engineering, Malaviya National Institute of Technology, Jaipur 302017, India)
,
Chaturvedi Nidhi
(Smart Sensor Area, CSIR - Central Electronics Engineering Research Institute, Pilani 333031, India)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
87
ページ:
195-201
発行年:
2018年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)