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J-GLOBAL ID:201802230039219176
整理番号:18A0269397
電場によるarsenene/グラフェンvan der Waalsヘテロ構造におけるSchottky障壁の調整【Powered by NICT】
Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field
著者 (9件):
Li Wei
(College of Physics and Electronic Engineering, Henan Normal University, Xinxiang 453007, China)
,
Li Wei
(School of Mathematics & Physics, Henan University of Urban Construction, Pingdingshan 467036, China)
,
Wang Tian-Xing
(College of Physics and Electronic Engineering, Henan Normal University, Xinxiang 453007, China)
,
Dai Xian-Qi
(College of Physics and Electronic Engineering, Henan Normal University, Xinxiang 453007, China)
,
Dai Xian-Qi
(Department of Physics, Zhengzhou Normal University, Zhengzhou, Henan 450044, China)
,
Wang Xiao-Long
(College of Physics and Electronic Engineering, Henan Normal University, Xinxiang 453007, China)
,
Ma Ya-Qiang
(College of Physics and Electronic Engineering, Henan Normal University, Xinxiang 453007, China)
,
Chang Shan-Shan
(College of Physics and Electronic Engineering, Henan Normal University, Xinxiang 453007, China)
,
Tang Ya-Nan
(Department of Physics, Zhengzhou Normal University, Zhengzhou, Henan 450044, China)
資料名:
Physica E: Low-Dimensional Systems and Nanostructures
(Physica E: Low-Dimensional Systems and Nanostructures)
巻:
88
ページ:
6-10
発行年:
2017年
JST資料番号:
W1066A
ISSN:
1386-9477
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)