文献
J-GLOBAL ID:201802230051292715
整理番号:18A1648481
高電子移動度半導体Bi_2O_2Seの電子的および機械的性質【JST・京大機械翻訳】
Electronic and mechanical property of high electron mobility semiconductor Bi2O2Se
著者 (6件):
Liu Jiang
(Department of Applied Physics, Xi’an University of Technology, Xi’an 710054, China)
,
Tian Liqiang
(Department of Applied Physics, Xi’an University of Technology, Xi’an 710054, China)
,
Mou Yao
(Department of Applied Physics, Xi’an University of Technology, Xi’an 710054, China)
,
Jia Wanli
(Department of Applied Physics, Xi’an University of Technology, Xi’an 710054, China)
,
Zhang Lin
(Department of Applied Physics, Xi’an University of Technology, Xi’an 710054, China)
,
Liu Rujun
(Department of Applied Physics, Xi’an University of Technology, Xi’an 710054, China)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
764
ページ:
674-678
発行年:
2018年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)