文献
J-GLOBAL ID:201802230594179348
整理番号:18A0084215
NANDフラッシュ系記憶素子の内要求遊休時間を利用した効果的な前store/pre負荷法【Powered by NICT】
An effective pre-store/pre-load method exploiting intra-request idle time of NAND flash-based storage devices
著者 (7件):
Kim Jin-Young
(Flash Design Team, Device Solution Division, Samsung Electronics, Gyeonggi-Do 445-701, Korea)
,
Kim Jin-Young
(Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea)
,
You Tae-Hee
(Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea)
,
Seo Hyeokjun
(Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea)
,
Yoon Sungroh
(Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, Korea)
,
Gaudiot Jean-Luc
(Department of Electrical Engineering and Computer Science, University of California, Irvine, CA 92697-2625, USA)
,
Chung Eui-Young
(Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea)
資料名:
Microprocessors and Microsystems
(Microprocessors and Microsystems)
巻:
50
ページ:
222-236
発行年:
2017年
JST資料番号:
H0781A
ISSN:
0141-9331
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)