文献
J-GLOBAL ID:201802231141052777
整理番号:18A1685462
ハイブリッドInAs Stranski Krastanovおよびサブ単分子層量子ドットヘテロ構造の最適化と近赤外領域における光起電力エネルギー変換効率に対するその効果【JST・京大機械翻訳】
Optimization of hybrid InAs stranski krastanov and submonolayer quantum dot heterostructures and its effect on photovoltaic energy conversion efficiency in near infrared region
著者 (6件):
Das D.
(Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India)
,
Panda D.P.
(Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India)
,
Tongbram B.
(Center for Research in Nanotechnology & Science, Indian Institute of Technology Bombay, Mumbai 400076, India)
,
Saha J.
(Center for Research in Nanotechnology & Science, Indian Institute of Technology Bombay, Mumbai 400076, India)
,
Chavan V.
(Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India)
,
Chakrabarti S.
(Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India)
資料名:
Solar Energy
(Solar Energy)
巻:
171
ページ:
64-72
発行年:
2018年
JST資料番号:
E0099A
ISSN:
0038-092X
CODEN:
SRENA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)