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J-GLOBAL ID:201802231247362312   整理番号:18A0937625

高効率Cu_2Sn(S,Se)_4太陽電池のための空気におけるポストアニーリングの役割に関する洞察【JST・京大機械翻訳】

Insight into the role of post-annealing in air for high efficient Cu2ZnSn(S,Se)4 solar cells
著者 (13件):
Gao Shoushuai
(Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, and Key Laboratory of Optoelectronic Information Technical Science of the Education Ministry of China, Nankai University, Tianjin 300071, PR China)
Zhang Yi
(Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, and Key Laboratory of Optoelectronic Information Technical Science of the Education Ministry of China, Nankai University, Tianjin 300071, PR China)
Ao Jianping
(Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, and Key Laboratory of Optoelectronic Information Technical Science of the Education Ministry of China, Nankai University, Tianjin 300071, PR China)
Li Xiuling
(Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, and Key Laboratory of Optoelectronic Information Technical Science of the Education Ministry of China, Nankai University, Tianjin 300071, PR China)
Qiao Shuang
(College of Physics Science and Technology, Hebei University, Baoding 071002, PR China)
Wang Ying
(College of Physics Science and Technology, Hebei University, Baoding 071002, PR China)
Lin Shuping
(Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, and Key Laboratory of Optoelectronic Information Technical Science of the Education Ministry of China, Nankai University, Tianjin 300071, PR China)
Zhang Zhaojing
(Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, and Key Laboratory of Optoelectronic Information Technical Science of the Education Ministry of China, Nankai University, Tianjin 300071, PR China)
Wang Dongxiao
(Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, and Key Laboratory of Optoelectronic Information Technical Science of the Education Ministry of China, Nankai University, Tianjin 300071, PR China)
Zhou Zhiqiang
(Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, and Key Laboratory of Optoelectronic Information Technical Science of the Education Ministry of China, Nankai University, Tianjin 300071, PR China)
Sun Guozhong
(Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, and Key Laboratory of Optoelectronic Information Technical Science of the Education Ministry of China, Nankai University, Tianjin 300071, PR China)
Wang Shufang
(College of Physics Science and Technology, Hebei University, Baoding 071002, PR China)
Sun Yun
(Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, and Key Laboratory of Optoelectronic Information Technical Science of the Education Ministry of China, Nankai University, Tianjin 300071, PR China)

資料名:
Solar Energy Materials and Solar Cells  (Solar Energy Materials and Solar Cells)

巻: 182  ページ: 228-236  発行年: 2018年 
JST資料番号: D0513C  ISSN: 0927-0248  資料種別: 逐次刊行物 (A)
記事区分: 原著論文  発行国: オランダ (NLD)  言語: 英語 (EN)
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