文献
J-GLOBAL ID:201802231503512727
整理番号:18A0799202
移動ドープHダイヤモンドにおける表面粗さとキャリア輸送に対する水素プラズマパワーの役割【JST・京大機械翻訳】
The role of hydrogen plasma power on surface roughness and carrier transport in transfer-doped H-diamond
著者 (6件):
Crawford Kevin G.
(School of Engineering, University of Glasgow, Glasgow G12 8LT, United Kingdom)
,
Tallaire Alexandre
(LSPM-CNRS, Universite Paris 13, Villetaneuse 93430, France)
,
Li Xu
(School of Engineering, University of Glasgow, Glasgow G12 8LT, United Kingdom)
,
Macdonald David A.
(School of Engineering, University of Glasgow, Glasgow G12 8LT, United Kingdom)
,
Qi Dongchen
(Department of Chemistry and Physics, La Trobe Institute for Molecular Science, La Trobe University, Melbourne, Victoria 3086, Australia)
,
Moran David A.J.
(School of Engineering, University of Glasgow, Glasgow G12 8LT, United Kingdom)
資料名:
Diamond and Related Materials
(Diamond and Related Materials)
巻:
84
ページ:
48-54
発行年:
2018年
JST資料番号:
W0498A
ISSN:
0925-9635
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)