文献
J-GLOBAL ID:201802231507217905
整理番号:18A2042346
6.5kV SiC MOSFETに適用したロバストエッジ終端の研究【JST・京大機械翻訳】
Investigation of the Robust Edge Termination Applied to 6.5kV SiC MOSFET
著者 (8件):
Ebihara Kohei
(Mitsubishi Electric Corporation, Advanced Technology R&D Center; 8-1-1 Tsukaguchi-Honmachi Amagasaki, Hyogo, Japan, 661-8661)
,
Kawahara Koutarou
(Mitsubishi Electric Corporation, Advanced Technology R&D Center; 8-1-1 Tsukaguchi-Honmachi Amagasaki, Hyogo, Japan, 661-8661)
,
Hino Shiro
(Mitsubishi Electric Corporation, Advanced Technology R&D Center; 8-1-1 Tsukaguchi-Honmachi Amagasaki, Hyogo, Japan, 661-8661)
,
Sadamatsu Koji
(Mitsubishi Electric Corporation, Advanced Technology R&D Center; 8-1-1 Tsukaguchi-Honmachi Amagasaki, Hyogo, Japan, 661-8661)
,
Nagae Akemi
(Mitsubishi Electric Corporation, Advanced Technology R&D Center; 8-1-1 Tsukaguchi-Honmachi Amagasaki, Hyogo, Japan, 661-8661)
,
Nakao Yukiyasu
(Mitsubishi Electric Corporation, Advanced Technology R&D Center; 8-1-1 Tsukaguchi-Honmachi Amagasaki, Hyogo, Japan, 661-8661)
,
Watanabe Hiroshi
(Mitsubishi Electric Corporation, Advanced Technology R&D Center; 8-1-1 Tsukaguchi-Honmachi Amagasaki, Hyogo, Japan, 661-8661)
,
Yamakawa Satoshi
(Mitsubishi Electric Corporation, Advanced Technology R&D Center; 8-1-1 Tsukaguchi-Honmachi Amagasaki, Hyogo, Japan, 661-8661)
資料名:
Materials Science Forum
(Materials Science Forum)
巻:
924
ページ:
778-781
発行年:
2018年
JST資料番号:
D0716B
ISSN:
0255-5476
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
スイス (CHE)
言語:
英語 (EN)