文献
J-GLOBAL ID:201802232873831110
整理番号:18A0438777
制御可能なトレンチゲートを持つ新しいスナップバックと低ターンオフ損失逆伝導IGBTのシミュレーション研究【Powered by NICT】
Simulation Study of a Novel Snapback-Free and Low Turn-Off Loss Reverse-Conducting IGBT With Controllable Trench Gate
著者 (4件):
Wei Jie
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China)
,
Luo Xiaorong
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China)
,
Huang Linhua
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China)
,
Zhang Bo
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
39
号:
2
ページ:
252-255
発行年:
2018年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)