文献
J-GLOBAL ID:201802233386561922
整理番号:18A1616987
グラフェン系シリコンSchottky太陽電池の作製と特性評価【JST・京大機械翻訳】
Fabrication and characterization of graphene based silicon Schottky solar cell
著者 (7件):
Singh Sumitra
(Flexible and Non-Silicon Electronics Group, CSIR- Central Electronics Engineering Institute, Pilani, 333031, India)
,
Powar Sadanand
(Department of Physics, National Institute of Technology (NIT), Warangal, 506002, India)
,
Mahala Pramila
(Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science (BITS), Pilani, 333031, India)
,
Majee Subimal
(Flexible and Non-Silicon Electronics Group, CSIR- Central Electronics Engineering Institute, Pilani, 333031, India)
,
Eshwar T.
(Flexible and Non-Silicon Electronics Group, CSIR- Central Electronics Engineering Institute, Pilani, 333031, India)
,
Kumar Anil
(Flexible and Non-Silicon Electronics Group, CSIR- Central Electronics Engineering Institute, Pilani, 333031, India)
,
Akhtar Jamil
(Flexible and Non-Silicon Electronics Group, CSIR- Central Electronics Engineering Institute, Pilani, 333031, India)
資料名:
Superlattices and Microstructures
(Superlattices and Microstructures)
巻:
120
ページ:
637-641
発行年:
2018年
JST資料番号:
D0600B
ISSN:
0749-6036
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)