文献
J-GLOBAL ID:201802233440839510
整理番号:18A0446797
水素アニーリングによるシリコン移動法を用いた最終的にスケールDRAMの信頼性限界の克服【Powered by NICT】
Overcoming the reliability limitation in the ultimately scaled DRAM using silicon migration technique by hydrogen annealing
著者 (10件):
Ryu Seong-Wan
(R & D Division, SK Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea)
,
Min Kyungkyu
(R & D Division, SK Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea)
,
Shin Jungho
(R & D Division, SK Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea)
,
Kwon Heimi
(R & D Division, SK Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea)
,
Nam Donghoon
(R & D Division, SK Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea)
,
Oh Taekyung
(R & D Division, SK Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea)
,
Jang Tae-Su
(R & D Division, SK Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea)
,
Yoo Minsoo
(R & D Division, SK Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea)
,
Kim Yongtaik
(R & D Division, SK Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea)
,
Hong Sungjoo
(R & D Division, SK Hynix Semiconductor Inc., San 136-1 Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
IEDM
ページ:
21.6.1-21.6.4
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)