文献
J-GLOBAL ID:201802234402029395
整理番号:18A0942153
近弾道輸送による超微細GeナノワイヤnMOSFETにおける移動度ゆらぎ誘起低周波雑音【JST・京大機械翻訳】
Mobility Fluctuation-Induced Low-Frequency Noise in Ultrascaled Ge Nanowire nMOSFETs With Near-Ballistic Transport
著者 (7件):
Wu Wangran
(Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA)
,
Wu Heng
(Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA)
,
Sun Weifeng
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Si Mengwei
(Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA)
,
Conrad Nathan
(Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA)
,
Zhao Yi
(Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China)
,
Ye Peide D.
(Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
65
号:
6
ページ:
2573-2577
発行年:
2018年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)