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J-GLOBAL ID:201802234544216316
整理番号:18A0434948
二次元InSeにおけるn型伝導率の起源:表面吸着とvan der WaalsギャップからのIn原子【Powered by NICT】
Origin of n-type conductivity in two-dimensional InSe: In atoms from surface adsorption and van der Waals gap
著者 (7件):
Wang Hui
(State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China)
,
Shi Jun-jie
(State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China)
,
Huang Pu
(State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China)
,
Ding Yi-min
(State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China)
,
Wu Meng
(State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China)
,
Cen Yu-lang
(State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China)
,
Yu Tongjun
(State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China)
資料名:
Physica E: Low-Dimensional Systems and Nanostructures
(Physica E: Low-Dimensional Systems and Nanostructures)
巻:
98
ページ:
66-73
発行年:
2018年
JST資料番号:
W1066A
ISSN:
1386-9477
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)