文献
J-GLOBAL ID:201802235803210179
整理番号:18A0073632
AlGaN/AlN/GaN/AlGaNベースデバイスにおける自己加熱効果と偏光効果【Powered by NICT】
Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices
著者 (7件):
Ahmeda K.
(Nanoelectronic Devices Computational Group, College of Engineering, Swansea University, Swansea, United Kingdom)
,
Ubochi B.
(Nanoelectronic Devices Computational Group, College of Engineering, Swansea University, Swansea, United Kingdom)
,
Kalna K.
(Nanoelectronic Devices Computational Group, College of Engineering, Swansea University, Swansea, United Kingdom)
,
Benbakhti B.
(Department of Electronics and Electrical Engineering, Liverpool John Moores University, Liverpool, United Kingdom)
,
Duffy S. J.
(Department of Electronics and Electrical Engineering, Liverpool John Moores University, Liverpool, United Kingdom)
,
Zhang W.
(Department of Electronics and Electrical Engineering, Liverpool John Moores University, Liverpool, United Kingdom)
,
Soltani A.
(LN2 - University of Sherbrooke, Sherbrooke, QC Canada)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
EuMIC
ページ:
37-40
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)