文献
J-GLOBAL ID:201802236428075919
整理番号:18A0190662
グラフェンZnO:N Schottky接合をベースにした薄膜トランジスタ【Powered by NICT】
Graphene-ZnO:N Schottky junction based thin film transistor
著者 (8件):
Heo S.
(Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea)
,
Kim Y.J.
(Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea)
,
Kim C.H.
(Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea)
,
Lee S.K.
(Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea)
,
Lee H.J.
(Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea)
,
Hwang H.J.
(Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea)
,
Noh J.
(Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea)
,
Lee B.H.
(Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Republic of Korea)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
SNW
ページ:
131-132
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)