文献
J-GLOBAL ID:201802236817277447
整理番号:18A0159566
GaAs金属-ゲート誘電体と不動態化層としてのNdに基づく高k酸窒化物と酸化物-半導体キャパシタ【Powered by NICT】
GaAs Metal-Oxide-Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer
著者 (5件):
Liu L. N.
(Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong)
,
Choi H. W.
(Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong)
,
Xu J. P.
(School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China)
,
Tang W. M.
(Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong)
,
Lai P. T.
(Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
65
号:
1
ページ:
72-78
発行年:
2018年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)