文献
J-GLOBAL ID:201802237487812868
整理番号:18A0129298
ZnO薄膜トランジスタの性能に及ぼすAlドーピングの影響【Powered by NICT】
Effect of Al doping on performance of ZnO thin film transistors
著者 (7件):
Dong Junchen
(Institute of Microelectronics, Peking University, Beijing 100871, China)
,
Han Dedong
(Institute of Microelectronics, Peking University, Beijing 100871, China)
,
Li Huijin
(Institute of Microelectronics, Peking University, Beijing 100871, China)
,
Yu Wen
(Shenzhen Graduate School, Peking University, Shenzhen 518055, China)
,
Zhang Shendong
(Shenzhen Graduate School, Peking University, Shenzhen 518055, China)
,
Zhang Xing
(Institute of Microelectronics, Peking University, Beijing 100871, China)
,
Wang Yi
(Institute of Microelectronics, Peking University, Beijing 100871, China)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
433
ページ:
836-839
発行年:
2018年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)