文献
J-GLOBAL ID:201802238077974067
整理番号:18A1383638
急峻傾斜FETデバイスのためのCMOS互換低電力揮発性原子スイッチ【JST・京大機械翻訳】
CMOS compatible low-power volatile atomic switch for steep-slope FET devices
著者 (6件):
Lim Seokjae
(Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang 37673, South Korea)
,
Yoo Jongmyung
(Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang 37673, South Korea)
,
Song Jeonghwan
(Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang 37673, South Korea)
,
Woo Jiyong
(School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85281, USA)
,
Park Jaehyuk
(Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang 37673, South Korea)
,
Hwang Hyunsang
(Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang 37673, South Korea)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
113
号:
3
ページ:
033501-033501-4
発行年:
2018年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)