文献
J-GLOBAL ID:201802238224802794
整理番号:18A1243474
二重ゲートグラフェン電界効果トランジスタにおける増強されたコンダクタンス【JST・京大機械翻訳】
Enhanced transconductance in a double-gate graphene field-effect transistor
著者 (6件):
Hwang Byeong-Woon
(School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea)
,
Yeom Hye-In
(Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea)
,
Kim Daewon
(Department of Electronic Engineering, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin 17104, Republic of Korea)
,
Kim Choong-Ki
(School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea)
,
Lee Dongil
(School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea)
,
Choi Yang-Kyu
(School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea)
資料名:
Solid-State Electronics
(Solid-State Electronics)
巻:
141
ページ:
65-68
発行年:
2018年
JST資料番号:
H0225A
ISSN:
0038-1101
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)