文献
J-GLOBAL ID:201802238725789656
整理番号:18A1310396
圧電バイポーラトランジスタに基づく超高感度歪センサ【JST・京大機械翻訳】
Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor
著者 (8件):
Zhu Ping
(School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China)
,
Zhao Ziming
(School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China)
,
Nie Jiaheng
(School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China)
,
Hu Gongwei
(School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China)
,
Li Lijie
(Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Swansea SA1 8EN, UK)
,
Zhang Yan
(School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China)
,
Zhang Yan
(Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China)
,
Zhang Yan
(College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China)
資料名:
Nano Energy
(Nano Energy)
巻:
50
ページ:
744-749
発行年:
2018年
JST資料番号:
W3116A
ISSN:
2211-2855
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)