文献
J-GLOBAL ID:201802239172567638
整理番号:18A1616955
AlGaN/AlN/GaNヘテロ構造電界効果トランジスタにおける高温電子移動度に対する偏光Coulomb場散乱の影響【JST・京大機械翻訳】
Influence of polarization Coulomb field scattering on high-temperature electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
著者 (6件):
Liu Yan
(College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, China)
,
Lin Zhaojun
(School of Microelectronics, Shandong University, Jinan, 250100, China)
,
Cui Peng
(School of Microelectronics, Shandong University, Jinan, 250100, China)
,
Fu Chen
(School of Microelectronics, Shandong University, Jinan, 250100, China)
,
Lv Yuanjie
(National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China)
,
Cheng Zhiqun
(College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, China)
資料名:
Superlattices and Microstructures
(Superlattices and Microstructures)
巻:
120
ページ:
389-394
発行年:
2018年
JST資料番号:
D0600B
ISSN:
0749-6036
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)