文献
J-GLOBAL ID:201802239555147241
整理番号:18A2025025
GaN Schottkyダイオードのトラップ支援応力誘起ESD信頼性【JST・京大機械翻訳】
Trap Assisted Stress Induced ESD Reliability of GaN Schottky Diodes
著者 (9件):
Shankar Bhawani
(Advance Nanoelectronic Device and Circuit Research Laboratory, Indian Institute of Science, Bangalore, 560012, India)
,
Singh Rahul
(Advance Nanoelectronic Device and Circuit Research Laboratory, Indian Institute of Science, Bangalore, 560012, India)
,
Sengupta Rudrarup
(Advance Nanoelectronic Device and Circuit Research Laboratory, Indian Institute of Science, Bangalore, 560012, India)
,
Khand Heena
(Advance Nanoelectronic Device and Circuit Research Laboratory, Indian Institute of Science, Bangalore, 560012, India)
,
Soni Ankit
(Advance Nanoelectronic Device and Circuit Research Laboratory, Indian Institute of Science, Bangalore, 560012, India)
,
Gupta Sayak Dutta
(Advance Nanoelectronic Device and Circuit Research Laboratory, Indian Institute of Science, Bangalore, 560012, India)
,
Raghavan Srinivasan
(Center for Nanoscience and Engineering, Indian Institute of Science, Bangalore, 560012, India)
,
Gossner Harald
(Intel Deutschland GmbH, Am Campeon 10-12, Neubiberg, 85576, Germany)
,
Shrivastava Mayank
(Advance Nanoelectronic Device and Circuit Research Laboratory, Indian Institute of Science, Bangalore, 560012, India)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2018
号:
EOS/ESD
ページ:
1-6
発行年:
2018年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)