文献
J-GLOBAL ID:201802239805169057
整理番号:18A1105250
トランジスタ電気パラメータ抽出のためのサブ1ns特性化方法論【JST・京大機械翻訳】
Sub-1 ns characterization methodology for transistor electrical parameter extraction
著者 (6件):
Qu Yiming
(College of Information Science & Electronic Engineering, Zhejiang University, No.38, Zheda Road, Hangzhou 310013, China)
,
Chen Bing
(College of Information Science & Electronic Engineering, Zhejiang University, No.38, Zheda Road, Hangzhou 310013, China)
,
Liu Wei
(College of Information Science & Electronic Engineering, Zhejiang University, No.38, Zheda Road, Hangzhou 310013, China)
,
Han Jinghui
(College of Information Science & Electronic Engineering, Zhejiang University, No.38, Zheda Road, Hangzhou 310013, China)
,
Lu Jiwu
(College of Electrical and Information Engineering, Hunan University, Lushan Gate, Lushan South Road, Changsha 410082, China)
,
Zhao Yi
(College of Information Science & Electronic Engineering, Zhejiang University, No.38, Zheda Road, Hangzhou 310013, China)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
85
ページ:
93-98
発行年:
2018年
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)