文献
J-GLOBAL ID:201802240333635087
整理番号:18A2041335
シリコン上のモノリシック1.3μm InAs/GaAs量子ドットレーザの動的特性【JST・京大機械翻訳】
Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon
著者 (8件):
Hantschmann Constanze
(Centre for Photonic Systems, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK)
,
Vasil’ev Peter P.
(Centre for Photonic Systems, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK; Also associated with the PN Lebedev Physical Institute, 53 Leninsky Prospect, Moscow 119991, Russia)
,
Chen Siming M.
(Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK)
,
Liao Mengya
(Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK)
,
Seeds Alwyn J.
(Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK)
,
Liu Huiyun
(Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK)
,
Penty Richard V.
(Centre for Photonic Systems, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK)
,
White Ian H.
(Centre for Photonic Systems, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2018
号:
ISLC
ページ:
1-2
発行年:
2018年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)