文献
J-GLOBAL ID:201802240460182095
整理番号:18A2029284
負の容量,nチャネル,Si FinFET 二方向性サブ60MV/DEC,負のDIBL,負の微分抵抗,および改善された短チャネル効果【JST・京大機械翻訳】
Negative Capacitance, n-Channel, Si FinFETs: Bi-directional Sub-60 mV/dec, Negative DIBL, Negative Differential Resistance and Improved Short Channel Effect
著者 (9件):
Zhou Hong
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, U.S.A.)
,
Kwon Daewoong
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, U.S.A.)
,
Sachid Angada B.
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, U.S.A.)
,
Liao Yuhung
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, U.S.A.)
,
Chatterjee Korok
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, U.S.A.)
,
Tan Ava J.
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, U.S.A.)
,
Yadav Ajay K.
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, U.S.A.)
,
Hu Chenming
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, U.S.A.)
,
Salahuddin Sayeef
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, U.S.A.)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2018
号:
VLSI Technology
ページ:
53-54
発行年:
2018年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)